Electrical and optical properties of melting Au/Si eutectics on Si(111) |
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Authors: | M Brüggemann K Mümmler P Wissmann |
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Institution: | Institute of Physical and Theoretical Chemistry of the University of Erlangen-Nürnberg, Egerlandstrasse 3, D-91058 Erlangen, Germany, DE
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Abstract: | The Au/Si system exhibits an extremely low eutectic temperature of 363°?C. Thin gold films of 200 nm thickness were deposited on Si(111) single-crystals and the electrical and optical properties of the melting mixtures were investigated. The resistivity measurements were performed in situ in a combined LEED/Auger apparatus. A highly resolving spectroscopic ellipsometer was used for the optical analysis in the wavelength range 400–900 nm. The eutectic temperature was found to be lower than for bulk Au/Si samples. The structure analysis showed that small liquid Au/Si islands embedded in the silicon surface are formed by the melting process. Various heating/ cooling cycles show a characteristic hysteresis behaviour. |
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