InGaN/GaN MQD p–n junction photodiodes |
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| Authors: | Shang-Chao Hung Yan-Kuin Su Shoou-Jinn Chang Liang-Wen Ji Dashen Shen CH Huang |
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| Institution: | aInstitute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, No.1, Ta Hseuh Rd., East District, Tainan 70101, Taiwan ROC;bInstitute of Electro-Optical and Materials Science, National Huwei University of Science and Technology, Yunlin, 632, Taiwan ROC;cElectrical and Computer Engineering Department, The University of Alabama in Huntsville, Huntsville, AL 35899, USA |
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| Abstract: | The p–n junction photodiodes with InGaN/GaN MQD have been prepared by metal-organic chemical vapor deposition (MOCVD) growth; we achieved nanoscale InGaN self-assembled QDs in the well layers of the active region. The RT PL spectrum peak position for the fabricated InGaN/GaN MQD p–n Junction PDs is located at 464.6 nm and FWHM is 24.2 nm. After finishing device process, it was fond that the turn on voltage in forward bias and the break down voltage in reverse bias are about 3 and −13.5 V, respectively. Furthermore, with 1, 2, and 3 V applied bias, the maximum responsivity of the fabricated MQD p–n junction PD was observed at 350 nm, and the minimum of spectral response was measured at 465 nm. It was also found that the responsivity was nearly a constant from 390 to 440 nm. It seems to suggest that the spectral response in the range of 390–440 nm is due to the effect of the InGaN dots-in a-well active layers. |
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| Keywords: | InGaN p– n Junction Photodiodes MQD QCSE |
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