Design of Ka-band Monolithic Image Rejection Mixer |
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| Authors: | Ziqiang Yang Tao Yang and Yu Liu |
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| Institution: | (1) Microwave Center, University of Electronic Science and Technology of China, Chengdu, 610054, People’s Republic of China |
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| Abstract: | In this paper, a 30–40 GHz monolithic image rejection mixer is described. The mixer employs two drain LO injection mixer cells,
which can perform well even with zero drain bias voltage. Also it employs Lange Coupler for RF quadrature signal generation.
The mixer is fabricated by a commercial 0.18-μm pseudomorphic high electron-mobility transistor (pHEMT) process. It achieves
image rejection ratio of more than 20.4 dB and conversion loss of less than 12.6 dB in the frequency range of 30 to 38 GHz. |
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| Keywords: | Image rejection mixer Drain LO injection mixer Lange Coupler |
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