Thickness and frequency dependence of electric-field-induced strains of sol-gel derived (Pb<Subscript>0.97</Subscript>La<Subscript>0.02</Subscript>)(Zr<Subscript>0.95</Subscript>Ti<Subscript>0.05</Subscript>)O<Subscript>3</Subscript> antiferroelectric films期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Thickness and frequency dependence of electric-field-induced strains of sol-gel derived (Pb0.97La0.02)(Zr0.95Ti0.05)O3 antiferroelectric films

Authors:	Xihong Hao Jiwei Zhai Fen Zhou Xiwen Song Shengli An

Affiliation:	(1) Functional Materials Research Laboratory, Tongji University, 200092 Shanghai, China;(2) School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, 014010 Baotou, China;

Abstract:	(Pb_0.97La_0.02)(Zr_0.95Ti_0.05)O₃ (PLZT 2/95/5) antiferroelectric films with (100) preferred orientation were successfully prepared on Pt-buffered silicon substrates via the sol-gel method. SEM results indicated that PLZT 2/95/5 antiferroelectric films with a thickness over 1,000 nm showed a crack surface. Also, it was found that, as the increase of the thickness, the field-induced strains were decreased gradually. Moreover, the frequency-dependent field-induced strains illustrated that the typical strains-electric field (S-E) curves with the maximum values could be obtained at a lower measurement frequency <500 Hz.

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