Polar discontinuity doping of the LaVO_{3}/SrTiO_{3} interface |
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| Authors: | Hotta Y Susaki T Hwang H Y |
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| Affiliation: | Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277-8651, Japan. |
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| Abstract: | We have investigated the transport properties of LaVO_{3}/SrTiO_{3} Mott-insulator-band-insulator heterointerfaces for various configurations. The (001)-oriented n-type VO_{2}/LaO/TiO_{2} polar discontinuity is conducting, exhibiting a LaVO3 thickness-dependent metal-insulator transition and low temperature anomalous Hall effect. The (001) p-type VO_{2}/SrO/TiO_{2} interface, formed by inserting a single layer of bulk metallic SrVO3 or SrO, drives the interface insulating. The (110) heterointerface is also insulating, indicating interface conduction arising from electronic reconstructions. |
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