Biased bilayer graphene: semiconductor with a gap tunable by the electric field effect |
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Authors: | Castro Eduardo V Novoselov K S Morozov S V Peres N M R dos Santos J M B Lopes Nilsson Johan Guinea F Geim A K Neto A H Castro |
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Affiliation: | CFP and Departamento de Física, Faculdade de Ciências Universidade do Porto, P-4169-007 Porto, Portugal. |
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Abstract: | We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magnetotransport data (Shubnikov-de Haas measurements of the cyclotron mass), and using a tight-binding model, we extract the value of the gap as a function of the electronic density. We show that the gap can be changed from zero to midinfrared energies by using fields of less, approximately < 1 V/nm, below the electric breakdown of SiO2. The opening of a gap is clearly seen in the quantum Hall regime. |
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