Characterization of thermal properties of porous silicon film/silicon using photoacoustic technique |
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Authors: | Shen Q. Toyoda T. |
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Affiliation: | (1) Department of Applied Physics and Chemistry, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan |
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Abstract: | We have applied photoacoustic (PA) technique to study the thermal properties of porous silicon (PS) films formed on p-type Si substrates by electrochemical anodic etching. Four PS samples with close thicknesses but greatly different porosities (from 20 to 60%) were examined. From the dependences of the PA signals on the modulation frequency of excitation light measured under a transmission detection configuration (TDC), effective thermal diffusivities for the two-layered PS/Si samples were determined and found to decrease greatly from 0.095 to 0.020 cm2 s-1 as the porosity increased from 20 to 60%. This revised version was published online in August 2006 with corrections to the Cover Date. |
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Keywords: | porosity porous silicon thermal diffusion carrier diffusion photoacoustic technique thermal diffusivity |
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