| High Characteristic Temperature 1.3μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy |
| |
| 引用本文： | 季海铭,杨涛,曹玉莲,徐鹏飞,谷永先,马文全,王占国.High Characteristic Temperature 1.3μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy[J].中国物理快报,2010(2):285-287. |
| |
| 作者姓名： | 季海铭 杨涛 曹玉莲 徐鹏飞 谷永先 马文全 王占国 |
| |
| 基金项目： | Supported by the National High-Technology Research and Development Program of China under Grant No 2006AA03Z401, One-Hundred Talents Program of Chinese Academy of Sciences, and the National Natural Science Foundation of China under Grant No 60876033. |
| |
| 摘 要： | We report the molecular beam epitaxy growth of 1.3 μm InAs/GaAs quantum-dot （QD） lasers with high characteristic temperature T0. The active region of the lasers consists of five-layer InAs QDs with p-type modulation doping. Devices with a stripe width of 4 μm and a cavity length of 1200 μm are fabricated and tested in the pulsed regime under different temperatures. It is found that T0 of the QD lasers is as high as 532 K in the temperature range from 10°C to 60°C. In addition, the aging test for the lasers under continuous wave operation at 100°C for 72 h shows almost no degradation, indicating the high crystal quality of the devices.
|
| 关 键 词： | 量子点激光器 分子束外延生长 特征温度 GaAs 连续波激光器 调制掺杂 结晶质量 砷化铟 |
| 本文献已被 维普 等数据库收录！ |
|
