| Effect of Sputtering Parameters on Film Composition,Crystal Structure,and Coercivity of SmCo Based Films Deposited on Si （100） Substrates |
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| 作者姓名： | 薛刚 彭龙 张怀武 |
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| 作者单位： | State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 |
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| 基金项目： | Supported by the National Basic Research Program of China under Grant No 2007CB31407, and the International S＆：T Cooperation Program of China under Grant No 2006DFA53410. |
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| 摘 要： | The sputtering parameter mediated composition （SPMC） effect of 3.0-μm-thick SmCo-based films is experimentally and theoretically studied. The experimental results give a clear indication that the Sm concentration increases with the decreasing sputtering power or with the increasing Ar gas pressure, which are in agreement with the calculated values when the preferential sputtering effect is disregarded. The SPMC effect provides an opportunity for the same composite target to fabricate films with an Sm concentration varying from 13.8at.% to 17.3at.%, which is reasonable for the magnetic phase transformation （Sm2Co17→SmCo7→SmCo5） and the enhanced coercivity.
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| 关 键 词： | 溅射参数 Si（100） 钴基 晶体结构 组成 薄膜 钐 作者 |
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