| Strain-Compensated InGaAs/InAlAs Quantum Cascade Detector of 4.5 μm Operating at Room Temperature |
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| 作者姓名： | 孔宁 刘俊岐 李路 刘峰奇 王利军 王占国 |
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| 基金项目： | Supported by the National Science Fund for Distinguished Young Scholars of China under Grant No 60525406, the National Natural Science Foundation of China under Grant Nos 60736031, 60806018, 60906026 and 10990100, the National Basic Research Program of China under Grant No 2006CB604903, and the National High-tcch R＆D Program of China under Grant Nos 2007AA03Z446 and 2009AA03Z403. |
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| 摘 要： | We present a strain-compensated InP-based InGaAs/InAlAs photovoltaic quantum cascade detector grown by solid source molecular beam epitaxy. The detector is based on a vertical intersubband transition and electron transfer on a cascade of quantum levels which is designed to provide longitudinal optical phonon extraction stairs. By careful structure design and growth, the whole epilayer has a residual strain toward InP substrate of only -2.8× 10^-4. A clear narrow band detection spectrum centered at 4.5 μm has been observed above room temperature for a device with 200／times 200 ×μm^2 square mesa.
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| 关 键 词： | InGaAs InAlAs 温度探测器 量子级联 应变补偿 微米 材料 操作室 |
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