| Extrinsic Base Surface Passivation in High Speed ＂Type-II＂ GaAsSb/InP DHBTs Using an InGaAsP Ledge Structure |
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| 作者姓名： | 刘洪刚 金智 苏永波 王显泰 常虎东 周磊 刘新宇 吴德馨 |
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| 作者单位： | Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 |
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| 基金项目： | Supported by the National Basic Research Program of China under Grant No 2010CB327501. |
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| 摘 要： | Type-II GaAsSb/InP DHBTs with selectively-etched InGaAsP ledge structures are fabricated and characterized for the first time. The novel InGaAsP/GaAsSb/InP DHBTs with a 20nm lattice-matched GaAsSb base and a 75 nm InP collector have a dc current gain improvement by a factor of 2 and a cutoff frequency fT of 190 GHz. The InGaAsP ledge design provides a simple but effective approach to suppress the extrinsic base surface recombination and enable GaAsSb/InP DHBTs to further increase the operating frequencies and integration levels for millimeter wave applications.
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| 关 键 词： | InGaAsP 磷化铟 砷化镓 表面钝化 结构 锑 类型 GaAsSb |
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