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Fabrication and Characteristics of AIInN/A1N/GaN MOS-HEMTs with Ultra-Thin Atomic Layer Deposited Al2O3 Gate Dielectric |
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| Authors: | MAO Wei ZHANG Jin-Cheng XUE Jun-Shuai HAO Yao MA Xiao-Hua WANG Chong LIU Hong-Xia XU Sheng-Rui YANG Lin-An BI Zhi-Wei LIANG Xiao-Zhen ZHANG Jin-Feng KUANG Xian-Wei |
| Affiliation: | Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University Xi＇an 710071 |
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