| Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si （111） |
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| 作者姓名： | 王辉 梁琥 王勇 吴嘉伟 邓冬梅 刘纪美 |
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| 作者单位： | [1]State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 [2]Photonics Technology Center, Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong |
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| 摘 要： | We report the growth of high quality and crack-free GaN film on Si （111） substrate using Al0.2Ga0.8N/AlN stacked interlayers. Compared with the previously used single AlN interlayer, the AlGaN/AlN stacked interlayers can more effectively reduce the tensile stress inside the GaN layer. The cross-sectional TEM image reveals the bending and annihilation of threading dislocations （TDs） in the overgrown GaN film which leads to a decrease of TD density.
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| 关 键 词： | Si（111） 薄膜生长 氮化镓 氮化铝 中间层 透射电子显微镜 堆积 GaN薄膜 |
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