Cu(In,Ga)Se2 thin-film solar cells with ZnS(O,OH), Zn-Cd-S(O,OH), and CdS buffer layers |
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| Authors: | R.N. Bhattacharya K. Ramanathan L. Gedvilas B. Keyes |
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| Affiliation: | National Renewable Energy Laboratory (NREL), 1617 Cole Blvd., Golden, CO 80401, USA |
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| Abstract: | Cu(In,Ga)Se2 (CIGS) solar cell junctions prepared by chemical-bath-deposited (CBD) ZnS(O,OH), Zn-Cd-S(O,OH), and CdS buffer layers are discussed in this paper. The device performances are compared by applying CBD ZnS(O,OH), CBD Zn-Cd-S(O,OH), and CBD CdS buffer layers on similar CIGS absorbers. The C N impurities in CBD ZnS(O,OH) are identified with Fourier transform infrared spectroscopy (FTIR) techniques. The impurities containing carbon-nitrogen bonds are most likely cyanamide (NCN2−) or thiocyanate (SCN−), which resulted from the chemical reaction of thiourea and ammonia. |
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