Photoluminescence of CdGeP2 and (Cd,Mn)GeP2

Photoluminescence of CdGeP₂ (112) single crystal and CdGeP₂ epitaxial film grown on GaAs (001) substrate have been studied and their spectral similarity found. Spectral bands associated with donor/acceptor transitions peak at close energies for both substances and all are lower than the energy gap of the chalcopyrite crystal.On the other hand, the growth of (Cd,Mn)GeP₂ ferromagnetic layer on CdGeP₂ (112) single crystal was performed to make it possible observation of PL from both the ferromagnetic layer and substrate. The green laser excitation (514, 532 nm) produces a proper photoluminescence similar to that in the undoped CdGeP₂ crystal and film. An extra emission from the ferromagnetic-nonmagnetic heterojunction occurs to extend up to photon energies exceeding E_g of the host semiconductor. The short wavelength photoluminescence is to be due to (Cd,Mn)GeP₂ dilute magnetic semiconductor (DMS). This fact states that Mn-doped II-IV-V₂ chalcopyrites are closer to II-VI DMS than to another group III-V DMS, where the heavy Mn-doping suppresses photoluminescence at all. Features of the observed short wavelength emission are discussing based on the temperature and spectral analyses.