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X-ray Raman scattering at the Si LII,III-edge of bulk amorphous SiO |
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| Authors: | C Sternemann JA Soininen A Hohl S Streit |
| Institution: | a Institute of Physics/DELTA, University of Dortmund, Maria-Goeppert-Mayer-Strasse, D-44221 Dortmund, Germany b Department of Physical Sciences, University of Helsinki, P.O. Box 64, FIN-00014, Finland c Institute for Materials Science, Darmstadt University of Technology, D-64287 Darmstadt, Germany d European Synchrotron Radiation Facility, B.P. 220, F-38043 Grenoble cedex, France |
| Abstract: | X-ray Raman spectra of bulk amorphous SiO have been measured at energy losses around the Si LII,III-edges for different momentum transfers at beamline ID16 of ESRF. The spectra are compared with measurements of the LII,III-edges of Si powder and with results of first-principles calculations for Si and α-quartz SiO2. Indications of sub-oxidic contributions to the LII,III-edges are found in the experiment and discussed with respect to the model of interface clusters mixture in bulk amorphous SiO. |
| Keywords: | 78 70 -Ck 71 15 -m 71 23 -k |
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