Conduction behaviour and thermoelectric power of Agx (As0.4Se0.6) 100−x chalcogenide system |
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Authors: | A.M. Ahmed N.M. Megahid M.M. Wakkad A.K. Diab |
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Affiliation: | Physics Department, Faculty of Science, South Valley University, 82524 Sohag, Egypt |
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Abstract: | Chalcogenide bulk alloys of Agx (As0.4Se0.6) 100−x (x=5, 7.5, 10, 12.5, 15 and 17.5) system were prepared by the conventional melt-quench technique. The d.c. electrical conductivity (σ) and thermoelectric power (TEP) measurements were carried out in the temperature range from 83 to 373 K and from 253 to 373 K, respectively. Variations of both σ and TEP with ambient temperature proved the p-type semiconducting behaviour of these materials. The current density-electric field characteristics were found to be linear. The activation energies, calculated from both the electrical conductivity Eσ and thermoelectric power Es, were found to be dependent on composition. |
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Keywords: | 61.43.Dq 66.10.Ed 72.15.Cz 72.15.Jf |
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