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Structural, electrical and optical properties of AgInS2 thin films grown by thermal evaporation method |
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| Authors: | Y Akaki S Kurihara K Tsurugida T Kakeno |
| Institution: | a Department of Electrical Engineering, Miyakonojo National College of Technology, 473-1 Yoshio, Miyakonojo, Miyazaki 885-8567, Japan b Department of Electrical Engineering, Ishikawa National College of Technology, 1 Tsubata, Kahoku, Ishikawa 929-0392, Japan c Department of Electrical and Electronic Engineering, Miyazaki University, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192, Japan |
| Abstract: | Structural electrical and optical properties of AgInS2 (AIS) thin films grown by the single-source thermal evaporation method were studied. The X-ray diffraction spectra indicated that the AIS single phase was successful grown by annealing above 400 °C in air. The AIS grain sizes became large with increasing the annealing temperatures. All polycrystalline AIS thin films were sulfur-poor from the electron probe microanalysis and indicated n-type conduction by the Van der Pauw technique. It was deduced that the sulfur vacancies were dominant in the films and enhanced n-type conduction. |
| Keywords: | A Inorganic compounds A Semiconductors A Thin films D Defects D Electrical properties |
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