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Temperature dependence of the photoluminescence spectra in AgGaS2 |
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| Authors: | PC Ricci R Corpino M Marceddu IM Tiginyanu |
| Institution: | a Unità di Cagliari, Dipartimento di Fisica, Università di Cagliari, Cittadella Universitaria SP, Monserrato-Sestu Km 0, 700, Monserrato (Ca), Italy and INFM, 09042 Cagliari, Italy b Laboratory of Low-Dimensional Semiconductor Structures, Technical University of Moldova, 2004 Chisinau, Moldova |
| Abstract: | The Silver Gallium Sulfide (AgGaS2) ternary compound is a wide bandgap semiconductor (about 2.7 eV) whose photoluminescence properties are characterized by excitons and donor-acceptor pairs recombinations. We have performed photoluminescence (PL) measurement exciting with the third harmonic (3.5 eV) of a Nd:YAG laser from room temperature down to 10 K at different excitation power. In this work we report the dependence of the ‘green band’ on the excitation power at various temperatures. |
| Keywords: | A Semiconductors D Optical properties |
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