Growth of crystalline quartz films with AT-cut plane by means of catalyst-enhanced vapor-phase epitaxy under atmospheric pressure |
| |
Authors: | Naoyuki Takahashi Takato Nakumura Yoshinori Kubo Katsumi Tamanuki |
| |
Institution: | a Department of Materials Science and Technology, Faculty of Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatus, Shizuoka 432-8561, Japan b Humo Laboratory Company, 5-9-11 Nishiogi-Kita, Suginami-ku, Tokyo 167-0042, Japan |
| |
Abstract: | Crystalline quartz films with an AT-cut plane have been grown by catalyst-enhanced vapor-phase epitaxy, at atmospheric pressure, using two quartz buffer layers on a sapphire (110) substrate. In this method, the first quartz buffer layer was deposited on the sapphire (110) substrate at 773 K. After annealing at 823 K, the second buffer layer was deposited at 723 K. The crystal quartz epitaxial layer was then grown at 843 K. The X-ray full-width-at-half-maximum (FWHM) value of the crystalline quartz film obtained was smaller than that of crystalline quartz prepared using a hydrothermal process. The crystalline quality of the quartz films was dependent on the thickness of the buffer layers. Furthermore, it was found that angle control of the cut plane depended on the film thickness of the second buffer layer. The quartz films grown by vapor phase epitaxy show good oscillation characteristics at room temperature. |
| |
Keywords: | A Thin films B Vapour deposition C X-ray diffraction D Crystal structure D Piezoelectricity |
本文献已被 ScienceDirect 等数据库收录! |
|