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Local structure of Mn in (Ga,Mn)As probed by X-ray absorption spectroscopy |
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| Authors: | R Bacewicz A Twaróg T Wojtowicz X Liu |
| Institution: | a Faculty of Physics, Warsaw University of Technology, 00-662 Warsaw, Poland b Department of Physics, University of Notre Dame, Notre Dame, IN 46556, USA c Institute of Physics, Polish Academy of Science, 02-668 Warsaw, Poland |
| Abstract: | Local structure of Mn atoms in Ga1−xMnxAs epilayers was studied using the X-ray absorption fine structure (XAFS) at Mn K-edge. X-ray near edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) techniques were used. XAFS spectra for different Mn sites has been calculated and compared with the experimental data. Multi-parameter fitting of the EXAFS data indicates that 15-25% of Mn atoms are in interstitial sites in the as grown films. The Mn-As bond length has been found longer than Ga-As bond length in GaAs for both substitutional (MnGa) and interstitial (MnI) sites. |
| Keywords: | A Semiconductors C EXAFS XANES |
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