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Preparation of CuInS2 thin films by metal-organic decomposition |
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| Authors: | Shigeyuki Nakamura Shizutoshi Ando |
| Institution: | a Department of Electrical and Electronic Engineering, Tsuyama National College of Technology, 624-1 Numa, Tsuyama, Okayama 708-8509, Japan b Department of Electrical Engineering, Tokyo University of Science, Shinjuku-ku, Tokyo 162-8601, Japan |
| Abstract: | Metal-organic decomposition (MOD) technique has been developed as a low cost thin film CuInS2 preparation method for solar cell application. XRD and Raman spectra measurement revealed that deposited films contain CuInS2. Stoichiometric films with a bandgap of 1.53 eV and an FWHM of 0.45° were obtained from a solution with Cu/In=1.5. |
| Keywords: | A Thin films |
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