| InGaAsP/InP双异质结发光管频响特性的研究 |
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| 引用本文： | 张桂成 沈彭年. InGaAsP/InP双异质结发光管频响特性的研究[J]. 发光学报, 1989, 10(1): 46-53 |
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| 作者姓名： | 张桂成 沈彭年 |
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| 作者单位： | 中国科学院上海冶金研究所 |
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| 摘 要： | 本文研究了光纤通信用1.3μmInGaAsP/InP双异质结发光管的频响特性。结果表明:器件有源区掺杂浓度;有源层厚度;注入电流;光谱特性;P-n结特性等因素,对发光管的频响特性有重要影响。老化前有源区DSD的存在与否对频响无明显关系。
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| 关 键 词： | InGaAsP／InP 发光管 频响特性 |
| 收稿时间： | 1988-01-11 |
STUDY OF THE MODULATION FREQUENCY CHARACTERISTICS FOR THE InGaAsP/InP DH LED'S |
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| Zhang Guicheng,Shen Pengnian. STUDY OF THE MODULATION FREQUENCY CHARACTERISTICS FOR THE InGaAsP/InP DH LED'S[J]. Chinese Journal of Luminescence, 1989, 10(1): 46-53 |
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| Authors: | Zhang Guicheng Shen Pengnian |
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| Affiliation: | Shanghai Institute of Metallurgy, Academic Sinica |
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| Abstract: | In this report the modulation frequency characteristics of InGaAsP/InP LED''s were investigated. The InGaAsP/InP DH wafers used for fabricating the LEDs were grown by LPE technique. The structure of the wafer consists of four layers,they are a n-InP buffer layer, Sn or Te doped, a InGaAsP undoped active layer, a p-InP confining layer doped with In-Zn or Zn,a p-InGaAsP contact layer In-Zn or Zn doped.The carrier concentration profile of the InGaAsP/InP DH wafers was measured by electrochemical C-V method. The devices output power is about 1mW at 100mA.The modulation frequency was measured by a tracking scope. The experimental results are as follows. |
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