Determination of electron effective mass from optical transition energy in InGaAs/InAlAs quantum wells |
| |
Authors: | N. Kotera K. Tanaka |
| |
Affiliation: | aKyushu Institute of Technology, Iizuka, Fukuoka 820-8502, Japan;bHiroshima City University, Asa-Minami, Hiroshima 731-3194, Japan |
| |
Abstract: | Nonparabolic effective mass of conduction subbands in InGaAs/InAlAs quantum wells (QWs), lattice-matched to InP, was quantitatively obtained by analyzing interband-optical transition spectra. Thickness of InGaAs well was 5.3, 9.4, and . Thickness of InAlAs barrier was about , and each QW was independent. Excellent agreement was obtained between experimental mass and theoretical mass predicted by Kane's three-level band theory on bulk InGaAs, in a wide energy range of from the bandedge. Method of experimental analysis on a relation between eigen energy and effective mass was described. |
| |
Keywords: | Nonparabolicity Effective mass Eigen energy Quantum well |
本文献已被 ScienceDirect 等数据库收录! |
|