| LP-MOCVD生长InGaAs/InP应变量子阱的研究 |
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| 引用本文： | 刘宝林,杨树人.LP-MOCVD生长InGaAs/InP应变量子阱的研究[J].光子学报,1994,23(4):313-318. |
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| 作者姓名： | 刘宝林 杨树人 |
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| 作者单位： | 吉林大学电子科学系 长春 130021 |
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| 摘 要： | 本文研究了LP-MOCVD对不同x值的In1-xGaxAs/InP生长条件,并且生长了压缩应变为0.5%三个不同阱宽的InGaAs/InP量子阱结构,利用77KPL光谱分析了能级同阱宽的关系,实现最窄阱宽为4.4nm,最小全半高峰宽为17.0mev.
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| 关 键 词： | 应变 MOCVD 量子阱 InGaAs/InP |
| 收稿时间： | 1993-05-26 |
STRAINED MULTI-QUANTUM WELL OF InGaAs/InP BY LP-MOCVD |
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| Liu Baolin,Yang Shuren,ChenBaijun,Wang Benzhong,Liu Shiyong.STRAINED MULTI-QUANTUM WELL OF InGaAs/InP BY LP-MOCVD[J].Acta Photonica Sinica,1994,23(4):313-318. |
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| Authors: | Liu Baolin Yang Shuren ChenBaijun Wang Benzhong Liu Shiyong |
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| Institution: | Electironic Science Department of Jinlin University, Changchun 130021 |
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| Abstract: | The differential composition and growth rate of InGaAs have been studied by Low Pressure Metalorganic Chemical Vapour Deposition(LP.MOCVD).Compressed strainedlayer 3-Quantum Well(MQW)structure with differental well width has been grown.ThePhoto-Luminescence(PL)in 77K were used to characterize the QW structures.The narrownarrowest well width is 4.6nm and Full Width at Half Maxium(FWHM)is 17.0meV. |
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| Keywords: | LP-MOCVD InGaAs Compressed-Strain Quantum Well |
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