| 1.55μm InGaAsP/InP应变量子阱激光器的LP－MOCVD生长 |
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| 引用本文： | 祝进田,李玉东.1.55μm InGaAsP/InP应变量子阱激光器的LP－MOCVD生长[J].光子学报,1994,23(3):273-277. |
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| 作者姓名： | 祝进田 李玉东 |
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| 作者单位： | 集成光电子学国家重点联合实验室 吉林大学电子科学与技术研究所, 长春 130023 |
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| 摘 要： | 本文首次报导了生长温度为550℃,以三甲基镓(TMGa)和三甲基铟(TMIn)为Ⅲ族源,用低压金属有机物气相沉积(LFMOCVD〕技术,高质量1.62um和1.3umInGaAsP及In0.57Ga0.43As0.98P0.04/In0.73Ga0.27As0.6P0.4量子阶结构的生长,并给出了1.55umGaAsP/InP分别限制应变量子阱结构激光器的生长条件,激光器于室温下脉冲激射,其阈值电流密度为2.4kA/cm2.
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| 关 键 词： | 应变量子阱激光器 LP－MOCVD三甲基镓 三甲基铟 |
| 收稿时间： | 1993-07-26 |
THE LP-MOCVD OF 1.55μm InGaAsP/InP STRAINED-LAYER QUANTUMWELL LASER |
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| Zhu Jintian,Li Yudong,Hu Lizhong,Chen Songyan,Hu Zhaohui,Liu Shiyong.THE LP-MOCVD OF 1.55μm InGaAsP/InP STRAINED-LAYER QUANTUMWELL LASER[J].Acta Photonica Sinica,1994,23(3):273-277. |
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| Authors: | Zhu Jintian Li Yudong Hu Lizhong Chen Songyan Hu Zhaohui Liu Shiyong |
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| Institution: | National Integrated Optronics Lab Jilin University region Changchun, 130023 |
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| Abstract: | This paper reports the growth of high quality 1.62μm and 1.3μm InGaAsP and In0.57Ga0.43As0.98P0.04/In0.73Ga0.27As0.6P0.4 quantum well structure, which using Tri methylidium(TMIn)and Trimethylgallium(TMGa) as group Ⅲ sourses with Low-pressure Metalorganic Chemical Vapor Deposition(Lp-MOCVD)technique at 550℃.The 1.55um InGaAsP/InP separated confinement strained.layer quantum well laser was fabricated The threshold current density of the laser is 2.4kA/cm2 under pulsed operation at room temperature. |
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| Keywords: | Strained-layer QW laser LP-MOCVD TMGa TMIn |
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