| 砷化镓高速集成电路内部电信号的光探针直接取样 |
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| 引用本文： | 贾刚 衣茂斌. 砷化镓高速集成电路内部电信号的光探针直接取样[J]. 光子学报, 1994, 23(5): 397-401 |
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| 作者姓名： | 贾刚 衣茂斌 |
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| 作者单位： | 吉林大学电子工程系，集成光电子学国家重点联合实验室吉林大学实验区 |
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| 摘 要： | 本文介绍了电光取样技术原理报道了砷化镓高速集成电路内部电信号在片直接电光取样测量系统,它的时间分辨率优于20ps,空间分辨率优于3μm.通过对砷化镓共面波导的测量证实该系统可以对砷化镓高速集成电路内部电信号进行在片直接电光取样测量。
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| 关 键 词： | 电光取样 高速集成电路 在片检测 微微秒光脉冲 半导体激光器 |
| 收稿时间： | 1993-09-14 |
DIRECT SAMPLINGOF ELECTRICAL SIGNAS IN GαAs HIGH-SPEED INTEGRATED CIRCUITS USING OPTICAL PROBE |
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| Jia Gang,Yi Maobin,Sun Wei,Cao Jie,Wang Jiasheng,Sun Jianguo,Gao Dingsan. DIRECT SAMPLINGOF ELECTRICAL SIGNAS IN GαAs HIGH-SPEED INTEGRATED CIRCUITS USING OPTICAL PROBE[J]. Acta Photonica Sinica, 1994, 23(5): 397-401 |
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| Authors: | Jia Gang Yi Maobin Sun Wei Cao Jie Wang Jiasheng Sun Jianguo Gao Dingsan |
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| Affiliation: | Department of Electronic Engineering, Jilin Universily, Changchun 130023, National Integrated Optronics Laboratory, Jilin University Region |
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| Abstract: | The principles of electrooptic sampling are reviewed briefly in this paper.Thedirect eletrooptic sampling system for on-wafer measurements of internal electrical signalsin GaAs high-speed integrated circuits with a temporal reso lution of less than 20ps and aspattal resolution of less than 3μm is reported.The probing of GaAs coplanar waveguideshas proved that this system can on-wafer probe internal electr ical signals in GaAs high-speed integrated circuits using direct electrooptic sampling. |
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| Keywords: | Electrooptic sampling High- speed integrated circuits On-wafer measurements Picosecond optical pulses Semiconductor lasers |
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