首页 | 本学科首页   官方微博 | 高级检索  
     


High-performance enhancement-mode AlGaN/GaN MOS-HEMTs with fluorinated stack gate dielectrics and thin barrier layer
Authors:Gao Tao  Xu Ruimin  Zhang Kai  Kong Yuechan  Zhou Jianjun  Kong Cen  Yu Xinxin
Affiliation:1. Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China(UESTC),Chengdu 611731, China;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute,Nanjing 210016, China;2. Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China(UESTC),Chengdu 611731, China;3. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute,Nanjing 210016, China
Abstract:
Keywords:AlGaN/GaN  enhancement-mode (E-mode)  stack gate dielectrics  atomic layer deposition (ALD)
本文献已被 万方数据 等数据库收录!
点击此处可从《半导体学报》浏览原始摘要信息
点击此处可从《半导体学报》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号