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Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
Authors:Karwal  Saurabh  Verheijen  Marcel A  Arts  Karsten  Faraz  Tahsin  Kessels  Wilhelmus M M  Creatore  Mariadriana
Institution:1.Department of Applied Physics, University of Technology Eindhoven, P.O. Box 513, 5600MB, Eindhoven, Netherlands
;2.Eurofins Material Science, High Tech, Campus 11, 5656 AE, Eindhoven, The Netherlands
;
Abstract:Plasma Chemistry and Plasma Processing - In this work, we report on the atomic layer deposition (ALD) of HfNx thin films by employing CpHf(NMe2)3 as the Hf(IV) precursor and Ar–H2 plasma in...
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