A synapse memristor model with forgetting effect |
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Authors: | Ling Chen Chuandong Li Tingwen Huang Yiran Chen Shiping Wen Jiangtao Qi |
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Affiliation: | 1. The College of Computer, Chongqing University, Chongqing 400044, China;2. School of Automation, Huazhong University of Science and Technology, Wuhan 430074, China;3. Texas A & M University at Qatar, Doha 5825, Qatar;4. Electrical and Computer Engineering, University of Pittsburgh, PA 15261, USA |
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Abstract: | In this Letter we improved the ion diffusion term proposed in literature [13] and redesigned the previous model as a dynamical model with two more internal state variables ‘forgetting rate’ and ‘retention’ besides the original variable ‘conductance’. The new model can not only describe the basic memory ability of memristor but also be able to capture the new finding forgetting behavior in memristor. And different from the previous model, the transition from short term memory to long term memory is also defined by the new model. Besides, the new model is better matched with the physical memristor (Pd/WOx/W) than the previous one. |
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Keywords: | Memristor Ion diffusion Forgetting Long term memory |
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