Key Laboratory of Semiconductors Materials, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract:
We report on chip-scale optical gates based on the integration of evanescent waveguide unitraveling-carrier photodiodes (EC-UTC-PDs) and intra-step quantum well electroabsorption modulators (IQW-EAMs) on n-InP substrates. These devices exhibit simultaneously 2.1 GHz and -16.2 dB RF-gain at 21 GHz with a 450 Ω thin-film resistor and a bypass capacitor integrated on a chip.