Pulsed laser deposition of photosensitive a-Si thin films |
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| Authors: | S Yasuda T Chikyow S Inoue N Matsuki K Miyazaki S Nishio M Kakihana and H Koinuma |
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| Institution: | (1) National Laboratories of Frascati, INFN, via E. Fermi 40, 00044 Frascati, Italy;(2) Physics Department and INFN, University of Salento, Via Arnesano, 73100 Lecce, Italy;(3) c/o Dipartimento di Ingegneria dell’Innovazione, NNL, National Nanotechnology Laboratory of Istituto Nazionale di Fisica della Materia (INFM), Via Arnesano, 73100 Lecce, Italy;(4) Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology – Hellas (FORTH), P.O. Box 1527, Heraklion, 71110, Crete, Greece |
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| Abstract: | Si films have been fabricated by pulsed KrF excimer laser deposition (PLD) through the use of various Si targets and deposition conditions. The deposits consisted of droplets and homogeneous films, which were assigned to be crystalline and amorphous silicon, respectively, by the micro Raman scattering measurements. Not only the crystalline but also the amorphous Si part scarcely (<1 atomic %) contained hydrogen regardless of whether or not the films are prepared in the presence of H2 gas. Conditions were explored to reduce the droplet formation and to produce photosensitive films. Amorphous Si films with photosensitivity (Cph/Cd) exceeding 103 were obtained, and they exhibited high stability against light soaking. Thus, PLD is a promising method to fabricate photosensitive and photostable a-Si films. |
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