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CMOS-compatible light-emitting devices based on thin aluminum nitride film containing Al nanocrystals |
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| Authors: | Y. Liu T. P. Chen M. Yang Z. H. Cen X. B. Chen Y. B. Li S. Fung |
| Affiliation: | 1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, People’s Republic of China 2. School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore 3. Center for Composite Materials, School of Astronautics, Harbin Institute of Technology, P.O. Box 3010, Harbin, 150080, People’s Republic of China 4. Department of Physics, The University of Hong Kong, Hong Kong, Hong Kong |
| Abstract: | Electroluminescence (EL) from Al-rich AlN thin films grown on p-type Si substrate by radio frequency (RF) magnetron sputtering has been observed at room temperature. The light-emitting structure based on the thin films can be driven by an electrical pulse as short as 10−5 s. No obvious change in the light emission intensity was observed after 106 pulse cycles. It has been found that the light emission intensity increases with the Al concentration. It is shown that the phenomenon is due to the enhancement of the percolative conduction via the Al nanocrystals distributed in the AlN matrix as a result of the increase in Al concentration. |
| Keywords: | KeywordHeading" >PACS 73.22.-f 73.63.Bd 81.07.Bc |
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