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Potassium ion-sensitive field effect transistors using valinomycin doped photoresist membrane
Authors:Satoru Kawakami  Tatsuo Akiyama and Yusuke Ujihira
Institution:(1) Department of Industrial Chemistry, Faculty of Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, 113 Tokyo, Japan
Abstract:Conclusion The potassium ion-sensitive membrane, prepared by the inclusion of valinomycin and plasticizer into the photoresist proved to be a good potassium ion-sensitive membrane for the ISFET. The plasticizer was found to play an important role in the photoresist membrane to obtain potassium ion-sensitivity. The plasticizer photoresist membrane showed not only more sensitivity but also longer term stability than the plasticized PVC membrane. It is concluded that the plasticized photoresist membrane deposited at the gate region of the ISFET works satisfactory for the determination of potassium ion activity in aqueous solution.
Kalium-ionensensitive Feldeffekt-Transistoren mit Valinomycin-dotierten photoresistenten Membranen
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