Potassium ion-sensitive field effect transistors using valinomycin doped photoresist membrane |
| |
Authors: | Satoru Kawakami Tatsuo Akiyama and Yusuke Ujihira |
| |
Institution: | (1) Department of Industrial Chemistry, Faculty of Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, 113 Tokyo, Japan |
| |
Abstract: | Conclusion The potassium ion-sensitive membrane, prepared by the inclusion of valinomycin and plasticizer into the photoresist proved to be a good potassium ion-sensitive membrane for the ISFET. The plasticizer was found to play an important role in the photoresist membrane to obtain potassium ion-sensitivity. The plasticizer photoresist membrane showed not only more sensitivity but also longer term stability than the plasticized PVC membrane. It is concluded that the plasticized photoresist membrane deposited at the gate region of the ISFET works satisfactory for the determination of potassium ion activity in aqueous solution.
Kalium-ionensensitive Feldeffekt-Transistoren mit Valinomycin-dotierten photoresistenten Membranen |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|