两个含dmit配体的二核钨簇合物的合成,结构表征和电学性质

通过配体取代反应, 以W2S4(dtp)2 (dtp = S2P(OC2H5)2-)为起始物, 将它和(PhCO)2dmit(dmit = )及R4NBr (R = Et, Bu)反应, 首次获得两个二核钨化合物(Bu4N)2W2S4(dmit)2 (I)和(Et4N)2W2S4(dmit)2 (II). 并对这两个化合物进行了红外光谱表征, 测定了化合物(I)的13C NMR谱和晶体结构. 结构分析表明, 在化合物(I)的晶胞堆积中存在S(((S超分子相互作用. 对化合物(II)的变温电导率测定证实化合物(II)具有半导体导电性. 化合物(I)的结晶学参数为: 正交晶系, 空间群Pbcn, 晶胞参数a = 18.048 (5), b = 15.937 (5), c = 19.191 (6) ?, V = 5520 (5) ?3, Z = 4, R = 0.084, Rw = 0.090

Syntheses, Structural Characterization and Conductivity of Two Binuclear Tungsten Compounds with dmit as the Ligands

By the substitution reaction of the ligand, the starting material W2S4(dtp)2 (dtp = S2P(OC2H5)2-) reacted with (PhCO)2dmit (dmit = ) and R4NBr (R = Et, Bu) to give two binuclear tungsten compounds (Bu4N)2W2S4(dmit)2 (I) and (Et4N)2W2S4(dmit)2 (II) for the first time. Both compounds have been characterized by IR spectra. The 13C NMR spectra and crystal structure of compound (I) are also reported. The X-ray structural analysis of (I) revealed S(((S supramolecular interaction in the packing structure. The measurement of the temperature dependence of the electronic conductivity shows that compound (II) possesses the semiconductor property. The crystal data of compound (I) are: orthorhombic, Pbcn, a = 18.048 (5), b = 15.937 (5), c = 19.191 (6) ?, V = 5520 (5) ?3, Z = 4, R = 0.084, Rw = 0.090.