| Deposition of TiN Films by Novel Filter Cathodic Arc Technique |
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| 引用本文： | 牛二武 范松华 李立 吕国华 冯文然 张谷令 杨思泽. Deposition of TiN Films by Novel Filter Cathodic Arc Technique[J]. 中国物理快报, 2006, 23(6): 1533-1535 |
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| 作者姓名： | 牛二武 范松华 李立 吕国华 冯文然 张谷令 杨思泽 |
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| 作者单位： | Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
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| 基金项目： | Supported by the National High Technology Research and Development Programme of China under Grant No 2002AA331020. |
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| 摘 要： | A straight magnetic filtering arc source is used to deposit thin films of titanium nitride. The properties of the films depend strongly on the deposition process. TiN films can be deposited directly onto heated substrates in a nitrogen atmosphere or onto unbiased substrates by condensing the Ti^＋ ion beam in about 300 eV N2^＋ nitrogen ion bombardment. In the latter case, the film stoichiometry is varied from an N：Ti ratio of 0.6-1.1 by controlling the arrival rates of Ti and nitrogen ions. Meanwhile, simple models are used to describe the evolution of compressive stress as function of the arrival ratio and the composition of the ion-assisted TiN films.
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| 关 键 词： | 沉积作用 TiN薄膜 滤光器 阴极弧技术 |
| 收稿时间： | 2006-03-01 |
| 修稿时间： | 2006-03-01 |
Deposition of TiN Films by Novel Filter Cathodic Arc Technique |
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| NIU Er-Wu,FAN Song-Hua,LI Li,LU Guo-Hua,FENG Wen-Ran,ZHANG Gu-Ling,YANG Si-Ze. Deposition of TiN Films by Novel Filter Cathodic Arc Technique[J]. Chinese Physics Letters, 2006, 23(6): 1533-1535 |
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| Authors: | NIU Er-Wu FAN Song-Hua LI Li LU Guo-Hua FENG Wen-Ran ZHANG Gu-Ling YANG Si-Ze |
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| Affiliation: | Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
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| Abstract: | A straight magnetic filtering arc source is used to deposit thin films of titanium nitride. The properties of the films depend strongly on the deposition process. TiN films can be deposited directly onto heated substrates in a nitrogen atmosphere or onto unbiased substrates by condensing the Ti+ ion beam in about 300eV N2+ nitrogen ion bombardment. In the latter case, the film stoichiometry is varied from an N:Ti ratio of 0.6--1.1 by controlling the arrival rates of Ti and nitrogen ions. Meanwhile, simple models are used to describe the evolution of compressive stress as function of the arrival ratio and the composition of the ion-assisted TiN films. |
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| Keywords: | 52.77.-j 52.75.-d 61.82.Bg |
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