锑化铟中载流子的复合过程

用定态光电导及光磁电的方法测量了p型n型InSb在85—290°K之间的电子及空穴的寿命。在室温附近,所有样品的截流子寿命都趋于同一值,在290°K时为3×10^-8秒。从寿命的绝对值及温度依赖关系,以及掺杂对寿命的影响,可以肯定在室温附近起主要作用的复合过程是带间碰撞复合过程。在200°K以下,p型样品中的电子寿命与空穴寿命有很大差别,表明有陷阱作用。用位于价带之上0.05eV的复合中心及位于导带之下0.11eV的电子陷阱能完满地解释200°K以下的寿命与温度的依赖关系。

RECOMBINATION PROCESSES OF CARRIERS IN INDIUM ANTIMONIDE

The carrier lifetimes of p-type and n-type InSb are measured by the stationary photo-conductive and photoelectromagnetic method in the temperature range 85-290°K. The carrier lifetimes of all intrinsic samples tend to the same value as the temperature increases toward the room temperature. It is 3×l0^-8 sec at 290°K. From the absolute value and temperature dependence of the lifetime and the influence of the doping, it is concluded that the carrier lifetime in InSb around the room temperature is controlled by the band to band impact recombination.Below 200°K, the lifetimes of majority and minority carriers in p-type InSb are different in magnitude and temperature dependence. It can well be explained by assuming the existance of a set of electron traps at 0.11 eV below the conduction band in conjunction with a set of recombination centres at 0.05 eV above the valence band.