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Formation model of bulk etching rate for polymer detectors
Authors:V Ditlov  
Institution:

Alichanov Institute of Theoretical and Experimental Physics, B. Cheremushkinskaya str., 25 Moscow, 117259, Russian Federation

Abstract:Any detector is composed of an enormous number of sensitive microscopic volumes (SMV) mainly in the state “NO” (Katz 1970. Unified Track Theory. In: Seventh International Colloquium on Corpuscular Photography and Visual Solid Detectors. Barcelona, pp. 1–29.). Irradiation evokes some spatial distribution of SMV in the state “Yes”. It can be described by the many-hit model of the SMV response (Ditlov, 1980. Theory of spatial calculation of primary action of d-electrons in track detectors with account of multiple scattering. In: Francois, H., et al. (Eds.), Solid State Nuclear Track Detectors. Pergamon Press, Oxford, pp. 131–141.). It appears that the process of etching can be described by its own many-hit model too, when the etching molecule attacks SMV in the state “Yes”. As a first our step of research, only the bulk rate Vb was considered.
Keywords:Many-hit model  Latent track  Plastic detector  Etching rate formation  Bulk etching  Diffusion  Activation energy
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