不同直径张应变锗材料对光谱和晶体质量的影响

绝缘体上张应变锗材料是通过能带工程提高锗材料光电性能得到的一种新型半导体材料,在微电子和光电子领域具有重要的应用前景.采用微电子技术中的图形加工方法以及利用锗浓缩的技术原理,在绝缘体上硅(SOI)材料上制备了绝缘体上张应变锗材料.喇曼与室温光致发光(PL)测试结果表明,不同圆形半径的绝缘体上锗材料张应变均为0.54％.对于绝缘体上张应变锗材料,应变使其发光红移的效果强于量子阱使其发生蓝移的效果,总体将使绝缘体上张应变锗材料的直接带发光峰位红移.同时0.54％张应变锗材料的直接带发光强度随着圆形半径的增大而减弱,这主要是因为圆形半径大的样品其晶体质量较差.该材料可进一步用于制备锗微电子和光电子器件.

Effects of Tensile Strained Ge Materials with Different Diameters on the Spectrum and Crystal Quality

The tensile strained germanium material on insulator is a new semiconductor material which can improve the photoelectric properties of germanium materials by the energy band engineering for its important application prospect in the field of microelectronics and optoelectronics.The tensile strained germanium material on insulator was prepared on the silicon on insulator (SOI) by using the graphics processing method in the microelectronics technology and the technical principle of germanium condensation.The test results of Raman and room temperature photoluminescence (PL) show that the tensile strain of the germanium material on insulator with different circular radii is 0.54％.For the tensile strained germanium material on insulator,the effect of the luminescence red shift caused by the strain is stronger than that of the blue shift caused by the quantum well,which will generally cause the luminescence peak red shift of the direct band of the tensile strained germanium material on insulator.Meanwhile,the direct band luminescence intensity of the 0.54％ tensile strained germanium materials decreases with the increase of the circular radius,which is mainly due to the poor crystal quality of samples with large circular radius.The material can be further used to prepare germanium microelectronies and optoelectronic devices.