提高GaN功率器件开关频率的技术途径

GaN基增强型高速开关器件是提升X波段微系统集成放大器工作效率的核心器件.介绍了凹槽栅结构、F-注入等制作GaN基增强型器件的关键技术,同时分析了场板、介质栅等对器件击穿特性的影响.针对影响GaN基功率器件开关特性的主要因素,重点分析了提高增强型GaN基功率器件开关频率的主要技术途径.减小器件的接触电阻、沟道方块电阻可以降低器件电阻对频率的影响.小栅长器件中栅电容较低,电子的沟道渡越时间较短,也可以提高器件的频率特性.此外,由于GaN基的功率器件频率高,设计应用在GaN器件上的栅驱动电路显得尤为重要.

Technological Approaches to Improve the Switching Frequency of GaN Power Devices

GaN-based enhanced high-speed switching device is the core device to improve the working efficiency of X-band micro system integrated amplifier.The key technologies are introduced to fabricate GaN-based enhanced device,for example recessed gate structure,F-injection and so on.Meanwhile,the influences of the field plate and the gate dielectric layer on the breakdown characteristics of the device are also analyzed.Aiming at the main factors that affect the switching characteristics of GaN-based power devices,the main technological approaches to improve the switching frequency of the enhanced GaN-based power devices are emphatically analyzed.Reducing the contact resistance of the device and the square resistance of the channel are effective ways to reduce the influence of the device resistance on frequency.The small-gate-length device has low gate capacitance,and the transition time of electrons in the channel is relatively short,so that the frequency characteristics of the device can be improved.In addition,due to the high frequency of GaN-based power devices,it is necessary to design a gate driving circuit applied to GaN devices.