Interaction of Hg Atom with Bare Si（111） Surface

1INTRODUCTION In the past decades,mercury has been a very use-ful electrode material in the fabrication and electrical measurement of molecule modified metal-metal and metal-semiconductor junctions.Majda et al.1,2]constructed a symmetric Hg-SCn-CnS-Hg junction to study the electron tunneling properties of alkanethio-late bilayers.Whitesides et al.3～5]fabricated Hg-SAM/SAM-Metal(Ag,Au,Cu)junctions to investi-gate the electrical breakdown voltage of self-assem-bled monolayers(SAMs…

Interaction of Hg Atom with Bare Si(111) Surface

To evaluate the interaction between Hg atom and bare Si(111) surface, three types of silicon cluster models of Si4H7, Si7H10 and Si16H20 together with their Hg complexes were studied by using hybrid (U)B3LYP density functional theory method. Optimized geometries and energies for Hg atom on different adsorption sites indicate that: 1) the binding energies at different adsorption sites are small (ranging from ～3 to 8 kJ/mol dependent on the adsorption sites), suggesting a weak interaction between Hg atom and silicon surface; 2) the most favorable adsorption site is the on top (T) site. By analyzing their natural bonding orbitals, the possible reason of this difference is suggested.