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Incorporation of phosphorus during gas phase epitaxy
Authors:K A Jones  J R Flemish
Institution:

Electronics Technology and Devices Laboratory, Fort Monmouth, New Jersey 07703-5601, USA

Geo-Centers, Inc., Hopatcong, New Jersey 07849, USA

Epitaxx, Inc., Princeton, New Jersey 08540, USA

Abstract:The PH3 desorption rate can be reduced and the decomposition rate increased, thereby increasing the P incorporation efficiency by replacing TMIn with InCl created by the pyrolysis of DEIn. InCl generated by cracking DEInCl and uncracked PH3 could be used for CBE growth of InP provided that H on the PH3 can be used to remove Cl from the InCl. Evidence is presented that this is possible. Evidence is also provided that P is more readily incorporated during OMVPE growth using TBP than PH3 because PH2 is a primary pyrolysis product, and it is less likely to desorb and more likely to decompose than PH3.
Keywords:
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