Infrared picosecond absorption spectroscopy of microcrystalline silicon: separation between carrier recombination in crystalline and amorphous fractions |
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Authors: | J Kudrna I Pelant J Štěpánek F Trojánek P Malý |
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Institution: | (1) Faculty of Mathematics and Physics, Charles University Prague, Ke Karlovu 3, 121 16 Prague 2, Czech Republic, CZ;(2) Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, 162 53 Prague 6, Czech Republic, CZ |
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Abstract: | We have studied ultra-fast carrier dynamics of photo-excited carriers in hydrogenated microcrystalline silicon prepared by
a very high frequency glow-discharge technique. We report on direct observation of two types of dynamics using selective photo-excitation
in picosecond pump and probe measurements. One type of the observed dynamics has been found to be independent of the sample
preparation, while the other reflects the relative weights of crystalline and amorphous fractions. We propose a simple rate-equation
model that describes the carrier dynamics in microcrystalline silicon in terms of the composition of those in Si microcrystallites
and in the a-Si:H tissue which surrounds the microcrystallites. The model without any fitting parameters reproduces the experimental
data very well when the dynamics are scaled with relative volume fractions as obtained from Raman spectra.
Received: 23 November 2000 / Accepted: 17 March 2001 / Published online: 23 May 2001 |
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Keywords: | PACS: 78 47 +p 78 66 -w |
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