Dependence of the GaAs (110) surface electronic state dispersion curves on the surface relaxation angle |
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| Authors: | David V. Froelich Mary E. Lapeyre John D. Dow Roland E. Allen |
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| Affiliation: | Department of Physics, University of Notre Dame Notre Dame, Indiana 46556, USA;Department of Physics, Texas A&M University College Station, Texas 77843, USA |
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| Abstract: | The surface state dispersion curves E() of the dangling bond states near the fundamental band gap, C3 and A5, are computed for both the established θ?27° model and the recently proposed θ?7° model of the (110) surface relaxation of GaAs, where θ is the surface bond rotation angle. The two models produce surface state dispersion curves that are similar to one another and to the data. |
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