Electronic energy levels in semiconductor quantum wells and superlattices |
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Authors: | G Bastard |
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Institution: | 1. Groupe de Physique des Solides de l''Ecole Normale Superieure, 24 rue Lhomond F-75005 Paris, France;2. IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598, U.S.A. |
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Abstract: | We present the results of the calculations of some electronic properties of semiconductor quantum wells and superlattices. The review includes the superlattice band structure and the quantum well bound energy levels; the virtual bound states of semiconductor quantum wells and their influence on the energy spectrum of separate confinement heterostructures. Finally the perturbation of quantum well bound states and exciton states by a static electric field applied parallel to the growth axis is considered. |
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