Design principles for CHIRP superlattice devices

A new negative resistance device named CHIRP (Coherent Hetero-Interfaces for Reflection and Penetration) superlattice diode is discussed. The operating principle of the device is explained employing the graded mini-band scheme. The approximate and practical form of the function which determines the period modulation of this superlattice is presented. The simulation of the electron behavior in the superlattice is compared with the electron reflection spectra obtained by the transfer matrix method. The practical lower limit of the layer numbers for the proper operation is estimated. The operation mechanism of the CHIRP superlattice is found to be invulnerable against the layer thickness fluctuations.