The potential of n-i-p-i doping superlattices for novel semiconductor devices

In this paper we suggest a number of device applications of n-i-p-i doping superlattices. The concept of these devices is based on the unusual electronic properties of this new class of semiconductors such as extremely long excess carrier lifetime, tunable band gap and carrier concentration. Emphasis will be on high-sensitivity low-noise photodetectors, tunable lasers, optical amplifiers, and on ultrafast devices for the generation, modulation and detection of optical signals.