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Electronic excitations in microstructured MOS - systems
Authors:D Heitmann  JP Kotthaus  U Mackens  W Beinvogl
Institution:Institut für Angewandte Physik, D-2000 Hamburg-36, Jungiusstraβe 11, Germany;Siemens Forschungslaboratorien, D-8000 München-83, Otto-Hahn Ring 6, Germany
Abstract:We have investigated the DC- and dynamic electronic properties of MOS-systems with spatially modulated charge density. The charge density modulation is induced via oxide modulation in lateral and cross-grating structures with typical periodicities of 500 nm. Magneto-conductance measurements are performed to characterize the charge density modulation. In spectroscopic investigations we find, that the charge density modulation strongly affects the collective excitation spectrum of the 2D-electron gas and induces minigaps in the 2D-plasmon dispersion.
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