The In2O3/CdTe interface: A possible contact for thin film solar cells? |
| |
| Authors: | F Rüggeberg A Klein |
| |
| Institution: | (1) Institute of Materials Science, Surface Science Division, Darmstadt University of Technology, Petersenstrasse 23, 64287 Darmstadt, Germany |
| |
| Abstract: | Transparent conductive In2O3 films were deposited by reactive evaporation of In and analyzed in-situ with photoelectron spectroscopy. The interface formation
of In2O3 with evaporated CdTe has been investigated using the same technique. A valence band offset ΔEVB=2.1±0.1 eV is determined, resulting in a negligible conduction band offset. However, In2O3 will not provide an Ohmic contact to n-CdTe, due to the Fermi level position at the interface. |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
