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双势垒结构Cu-Al2O3-MgF2-Au隧道结中的电子共振隧穿与发光特性研究
引用本文:王茂祥,孙承休,史晓春,俞建华.双势垒结构Cu-Al2O3-MgF2-Au隧道结中的电子共振隧穿与发光特性研究[J].物理学报,1999,48(2):326-331.
作者姓名:王茂祥  孙承休  史晓春  俞建华
作者单位:东南大学电子工程系,南京 210096
基金项目:国家自然科学基金(批准号:69576006)资助的课题.
摘    要:制备了Cu-Al2O3-MgF2-Au双势垒隧道发光结,分析了结加上一定偏压后的电子隧穿过程.指出由于构成隧道结的绝缘栅薄膜的厚度及禁带宽度的不同而导致双势垒中能级产生分裂,使电子通过栅区时产生共振隧穿现象.根据这一现象,并结合结的I-V特性,对结的发光性能进行了讨论.这种结构的结与普通单势垒MIM结相比,其发光效率(10-6—10-5)提高了近一个数量级,且发光光谱的波长范围及谱峰均向短波长方向 关键词

关 键 词:MIM  隧道结  双势垒  电子共振隧穿  发光特性
收稿时间:1998-05-27
修稿时间:7/6/1998 12:00:00 AM

RESEARCH OF ELECTRON RESONANT TUNNELING AND LIGHT EMISSION PROPERTIES OF DOUBLE-BARRIER TUNNER JUNCTION
WANG MAO-XIANG,SUN CHENG-XIU,SHI XIAO-CHUN and YU JIAN-HUA.RESEARCH OF ELECTRON RESONANT TUNNELING AND LIGHT EMISSION PROPERTIES OF DOUBLE-BARRIER TUNNER JUNCTION[J].Acta Physica Sinica,1999,48(2):326-331.
Authors:WANG MAO-XIANG  SUN CHENG-XIU  SHI XIAO-CHUN and YU JIAN-HUA
Abstract:The Cu-Al2O3-MgF2-Au double-barrier tunnel junction has been fabricated. In this structure the electron resonant tunneling occur when a bias voltage is applied because of the existence of a series of separated energy levels in the barrier.Together with the analysis of I-V characteristics of the junction, the light emission properties have been discussed in detail.It shows that the light emission efficency,light emission stability etc,have been improved greatly.The light emission spectrum shifts towards short wavelength region as compared with that of the single-barrier metal/insulator/metal junction.
Keywords:
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